980 nm High Power FP Laser Diode Epi-Wafer

980 nm High Power FP Laser Diode Epi-Wafer

PRODUCT DESCRIPTION
The 980 nm Fabry-Perot (FP) laser diode (LD) epi-wafer, designed especially for the high-power characteristics, is grown by metal-organic chemical vapor deposition (MOCVD), with strained InGaAs quantum well as the active layer.

EPITAXY STRUCTURE
p+-GaAs Contact
p-AlGaAs Cladding
Waveguide
Active layer
Waveguide
n-AlGaAs Cladding
n-GaAs Buffer
n-GaAs Substrate

WAFER CHARACTERIZATION

Photoluminescence (PL) of 3-inch epi-wafer

X-ray diffraction (XRD) of 3-inch epi-wafer

TYPICAL EPITAXY PARAMETERS

Parameters	Values
Thickness control	<±5%
Thickness uniformity	<±3%
PL wavelength uniformity	<±3 nm
Doping control	<±30%
Mole Fraction (x) Tolerance	<±2%

TYPICAL DEVICE PERFORMANCE

Parameters	Typical Values
Threshold current@25℃	65mA
Wavelength	980 nm
Slope efficiency	0.55 W/A
Ridge waveguide	30 μm x 1000 μm, as cleaved facet @ RT

KEY FEATURES
* MOCVD Epitaxy.
* 2/3/4/6 Inch.
* Excellent Beam Quality.
* High Power & Efficiency.
* High Uniformity & Reliability.

APPLICATIONS
* Materials Processing.
* Laser Pumps.
* Medical / Aesthetics

Our company can provide compound semiconductor optoelectronic epitaxial wafers, mainly based on advanced semiconductor technology to prepare optoelectronic epitaxial wafers with different structures and functions using indium phosphide (InP) and gallium arsenide (GaAs) as substrates, widely used in fields such as communication and medical aesthetics.