Compound Semiconductor Epi-wafer GaAs/InP
- Product Item : HYRD-W001
- Category： Wafers
- Wavelength: 1.3-2.3um
- 3/4/6 inch
- Mininum Order Quantity: one piece
- Origin: China
Compound Semiconductor Epi-wafer GaAs/InP
808-1064nm LD、SLD、VCSEL
2.5G/10G/25G DML、EML
1.3-2.3um DFB、LD
PD、APD、SPAD
Our company can provide compound semiconductor optoelectronic epitaxial wafers, mainly based on advanced semiconductor technology to prepare optoelectronic epitaxial wafers with different structures and functions using indium phosphide (InP) and gallium arsenide (GaAs) as substrates, widely used in fields such as communication and medical aesthetics.
808-1064nm LD、SLD、VCSEL
2.5G/10G/25G DML、EML
1.3-2.3um DFB、LD
PD、APD、SPAD
Our company can provide compound semiconductor optoelectronic epitaxial wafers, mainly based on advanced semiconductor technology to prepare optoelectronic epitaxial wafers with different structures and functions using indium phosphide (InP) and gallium arsenide (GaAs) as substrates, widely used in fields such as communication and medical aesthetics.
