Email: sales@hyrdglass.com Tel: +86 155 0129 0504


Wafers

HOME      PRODUCTS     Wafers       850 nm Vcsel Laser Diode EPI-Wafer


  • 850 nm Vcsel Laser Diode EPI-Wafer

850 nm Vcsel Laser Diode EPI-Wafer

  • Product Item : HYRD-W003
  • Category: Wafers
  • SB center: <±10 nm
  • Thickness uniformity: <±2.5%
  • PL wavelength uniformity: <±1.5 nm
  • Mole Fraction (x) Tolerance : <±2%
  • INQUIRY   EMAIL
850 nm Vcsel Laser Diode EPI-Wafer

PRODUCT DESCRIPTION
The 850 nm vertical-cavity surface-emitting laser (VCSEL) epi-wafer, designed especially for the telecommunication/gesture recognition/3D imaging applications, is grown by metal-organic chemical vapor deposition (MOCVD), with GaAs/AlGaAs multiple quantum wells (MQWs) as the active layer.

EPITAXY STRUCTURE
p+-GaAs
P-AlGaAs
P-DBR
Al0.98GaAs
MQWs
AlGaAs
n-DBR
n-GaAs buffer layer
n-GaAs substrate

WAFER CHARACTERIZATION

Reflectivity spectrum of 4-inch epi-wafer

Concentration depth profile of 4-inch epi-wafer



TYPICAL EPITAXY PARAMETERS

Parameters
Typical Values
SB center
<±10 nm
Thickness uniformity
<±2.5%
PL wavelength uniformity
<±1.5 nm
Doping control
<±30%
Mole Fraction (x) Tolerance
<±2%

TYPICAL DEVICE PERFORMANCE

Parameters
Typical Values
Threshold current@25℃
< 2 mA (15μm aperture)
Wavelength
845-855 nm
Slope efficiency
> 0.5 W/A
Operating temperature
0℃ ~ 80℃


KEY FEATURES
⚫ MOCVD Epitaxy.
⚫ 2/3/4 Inch.
⚫ 2.5G High-Speed.
⚫ High Uniformity & Reliability.

APPLICATIONS
⚫ Telecommunications


Our company can provide compound semiconductor optoelectronic epitaxial wafers, mainly based on advanced semiconductor technology to prepare optoelectronic epitaxial wafers with different structures and functions using indium phosphide (InP) and gallium arsenide (GaAs) as substrates, widely used in fields such as communication and medical aesthetics.