1310 nm 10G FP Laser Diode Epi-Wafer
- Product Item : HYRD-W005
- Category： Wafers
- Wavelength:1310 nm
- Slope efficiency: 0.25 W/A per facet
- Serial resistance: ＜10 Ω
- Operating temperature: -20℃ ~ +85℃
1310 nm 10G FP Laser Diode Epi-Wafer
The 1310 nm 10G Fabry-Perot (FP) laser diode (LD) epi-wafer, designed especially for the high-speed fiber-optic communications, is grown by metal-organic chemical vapor deposition (MOCVD) by HYRD, with strained InAlGaAs or InGaAsP multiple quantum wells (MQWs) as the active layer.
EPITAXY STRUCTURE
p+-InGaAs Contact
p-InP Cladding
Waveguide
MQWs
Waveguide
n-InP Cladding
n-InP Buffer
n-InP Substrate
WAFER CHARACTERIZATION
Photoluminescence (PL) of 2-inch epiwafer
X-ray diffraction (XRD) of 2-inch epiwafer
Parameters
Typical Values
Thickness control
<±5%
Thickness uniformity
<±3%
PL wavelength uniformity
<±5 nm for 2-inch epiwafer
Doping control
<±30%
p-InP carrier concentration
1E17 cm-3 ~ 2E18 cm-3
n-InP carrier concentration
1E16 cm-3 ~ 5E18 cm-3
p-InGaAs carrier concentration
1E19 cm-3 ~ 2E19 cm-3
Parameters
Typical Values
Threshold current@25℃
＜14mA
Wavelength
1310 nm
Slope efficiency
0.25 W/A per facet
Characteristic temperature
>85 K
Serial resistance
＜10 Ω
Operating temperature
-20℃ ~ +85℃
Ridge waveguide
2 μm x 250 μm, as cleaved
⚫ MOCVD Epitaxy.
⚫ 2/3/4 Inch.
⚫ 10G High-Speed.
⚫ High Uniformity & Reliability.
APPLICATIONS
⚫ Telecommunications
Our company can provide compound semiconductor optoelectronic epitaxial wafers, mainly based on advanced semiconductor technology to prepare optoelectronic epitaxial wafers with different structures and functions using indium phosphide (InP) and gallium arsenide (GaAs) as substrates, widely used in fields such as communication and medical aesthetics.
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